Wide-Bandgap Tech Forms Basis for RF Switches, LNAs, PAs
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At IMS 2025, visit TagoreTech in Booth #332 to see the latest in the company’s lineups of gallium-arsenide (GaAs) low-noise amplifiers (LNAs), 2nd-generation gallium-nitride (GaN)-based RF switches, MCM switches/LNA modules, and GaN power amplifiers.
The company’s products, based largely on its work in GaN and wide-bandgap semiconductor technologies, help drive innovation and integration in high-reliability, high-frequency applications. Tagore’s proprietary solutions aid in reducing system complexity, size, and power consumption across a broad range of applications—from 5G infrastructure to consumer electronics, automotive, defense, and public-safety systems.
Its lineup of 2nd-generation GaN RF switches and hybrid modules are intended to facilitate high-power system design. The devices assist designers in efforts to achieve high switching performance, low noise figures, and high integration densities in their RF front-end architectures.
At IMS, Tagore’s CTO, Manish Shah, will present “GaN-Si-Based RF Switch to Improve SWaP and Reduce Complexity Out of High-Power Radio Design” on June 16, 2025, at 10:40 am (local time), location 215.