Products

Sept. 16, 2008
Gate-Drive MOSFETs Are Rad-Hardened The RAD-Hard line of Logic Level gate drive power MOSFETs has been expanded with the addition of 60-, 100-, and 250-V MOSFETs that are suitable for switch-mode power supplies (SMPS), satellite power ...

Gate-Drive MOSFETs Are Rad-Hardened

The RAD-Hard line of Logic Level gate drive power MOSFETs has been expanded with the addition of 60-, 100-, and 250-V MOSFETs that are suitable for switch-mode power supplies (SMPS), satellite power distribution systems, and resonant power converters in highreliability applications. In contrast to bipolar devices, these MOSFETs can be driven directly from CMOS and TTL-level logic circuitry, simplifying many designs in terms of parts count and circuitry.

The devices feature low on-state resistance , fast switching speeds, and compact size. The expanded family of MOSFETs includes N- and P-channel devices in single- and multichip con gurations in a number of different package styles, such as SMD-0.5, SMD-2, LCC-28, 14 lead at pack, TO-205AF, low-ohmic TO-257AA, and MO-036AB housings. The maximum power dissipation is to 250 W. The MOSFETs offer total ionizing dose (TID) capability to 300 kRads, single-event effect (SEE) immunity to 82 MeV, and are available in screened and commercial-offthe- shelf (COTS) versions. International Recti er, 233 Kansas St., El Segundo, CA 90245; (800) 919-7898; Internet: www.irf.com.

See associated figure

Broadband Amp Powers 25 W From 20 To 1000 MHz

Model 1133-BBM2E4AEM is a compact, broadband power ampli er suitable for a variety of applications from 20 to 1000 MHz. It provides 25 W minimum output power over that range, with typical output power of 30 W. The power gain is at least 43 dB, and typically 46 dB over the full frequency range, with typical small-signal gain atness of 1.5 dB. The maximum noise gure is 10 dB and the maximum input return loss is 10 dB. The ampli er, which measures just 6.0 x 3.0 x 1.1 in., is rated for 30,000 ft. altitude use and for airborne environments. It achieves a thirdorder intercept point of +52 dBm with typical harmonics of -30 dBc and maximum spurious levels of -60 dBc. The ampli er, with 1-microsecond switching time, draws 3 A nominal supply current from a +28-VDC supply. Empower RF Systems, Inc., 316 West Florence Ave., Inglewood, CA 90301; (310) 412-8100; Fax: (310) 412-9232; E-mail: [email protected]; Internet: www.empowerrf.com.

GaAs SPDT Switch Controls DC To 7 GHz

Model MASW-007921 is a high-power single-pole, double-throw (SPDT) GaAs switch for applications from DC to 7 GHz. It handles as much as +38 dBm input power on signals sent to the receive port and as much as +40 dBm input power for signals sent to the transmit port. It exhibits 0.65 dB typical insertion loss to the transmit port and 0.7 dB typical insertion loss to the receive port. The high compression point of +40 dBm allows the switch to be used in systems with complex modulation formats. The isolation is typically 25 dB to 2.4 GHz and 30 dB through 5.8 GHz. The return loss is typically 15 dB. The input third-order intercept point for the transmit path is typically +52 dB at the highest frequencies and as good as +62 dBm through 2.4 GHz. The input third-order intercept point for the receive path is typically +51 dBm at the highest frequencies and as good as +59 dBm at 2.4 GHz. The input secondorder intercept point for the transmit path is +88 dBm at the highest frequencies and as good as +104 dBm at 5.8 GHz. The input second-order intercept point for the receive path is +84 dBm at 2.4 GHz and typically +102 dBm at 5.8 GHz. The switch offers typical rise/fall time of better than 21 ns. The SPDT GaAs switch, which is supplied in a lead-free 2-mm, 8-lead PDFN package, is designed for +3-VDC operation. In addition to serving commercial WiMAX and WLAN applications, the switch is well suited for mesh network applications. Tyco Electronics, M/A-COM, 1011 Pawtucket Blvd., Lowell, MA 01853; (800) 366-2266; (978) 442-5000; Internet: www.macom.com.

Downconverter Tackles Input Signals From 0.5 To 20.0 GHz

Model DC-0.5/200 is a broadband and agile frequency downconverter that handles input signals over a wide frequency range from 0.5 to 20.0 GHz at input levels to -35 dBm and provides selectable intermediatefrequency (IF) signals of 70, 140, or 160 MHz and an L-band output at 1200 MHz. The IF bandwidths are 20 MHz at 70 MHz, 40 MHz at 140 and 160 MHz, and 250 MHz at L-band. The low phase noise, of -96 dBc/Hz offset 10 kHz from the carrier and -125 dBc/Hz offset 1 MHz from the carrier, makes the downconverter ideal for a wide range of applications, including systems based on quadrature-amplitudemodulation (QAM) signals. The frequency conversion sense of the outputs can be independently programmed as inverted or noninverted signals and independent gain programming of 42 dB in 1-dB steps is provided for both outputs. The frequency downconverter features 2-Hz tuning resolution with third-order output intercept point of better than +25 dBm. It includes a front-panel keypad for local programming, and can be programmed remotely via RS-422, RS-485, and RS-232 control. MITEQ, Inc., 100 Davids Drive, Hauppauge, NY 11788; (631) 439-9108; (631) 436-7400; Fax: (631) 436-7430; E-mail: [email protected]; Internet: www.miteq.com.

Three-Way Splitters Operate DC To 7 GHz

Planar three-power power divider models IPS2480 and IPS2481 are suitable for applications from DC to 7 GHz. The threeway resistive power splitters, which are fabricated with thick lm on alumina, have evenly split attenuation of 9.5 dB among the channels. They can handle power levels to 3 W and feature amplitude atness of 0.7 dB across the frequency range with maximum VSWR of 1.30:1. Standard units, which are designed for microstrip or wirebond implementation in continuous 50- ohm environments, measure 0.24 x 0.24 in. and samples are available. International Manufacturing Services (IMS), 50 Schoolhouse Lane, Portsmouth, RI 02871; (401) 683-9700; Fax: (401) 683-5571; E-mail: [email protected]; Internet: www.ims-resistors.com.

See associated figure

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

Sponsored Recommendations

MMIC Medium-Power Amplifier Covers 6 to 12 GHz

Nov. 11, 2024
Mini-Circuits is a global leader in the design and manufacturing of RF, IF, and microwave components from DC to 86GHz.

RF Amplifier and Filter Testing with Mini-Circuits Power Sensors

Nov. 11, 2024
RF power sensors are essential for accurately measuring RF components like filters and amplifiers, focusing on parameters such as insertion loss and gain. Employing instruments...

High-Frequency Modules to 110 GHz

Nov. 11, 2024
Mini-Circuits’ wide selection of high-frequency modules are designed, assembled and tested in-house by the best talent in the industry at our Deer Park Technology Center. The ...

Defense Technology: From Sea to Space

Oct. 31, 2024
Learn about these advancements in defense technology, including smart sensors, hypersonic weapons, and high-power microwave systems.