Transistor Powers 300 W At 600 MHz

Model MRFE6VP6300H/HS is a rugged silicon LDMOS power transistor from Freescale Semiconductor capable of 300 W continuous-wave (CW) or pulsed output power from 1.8 to 600 MHz. Ideal for defense and aerospace applications, it provides typical gain of 26.5 dB and can withstand load mismatches as severe as a 65.0:1 VSWR across all phase angles. Available in bolt-down and solder-down ceramic packaging, the device can be used in single-ended or push-pull amplifier configurations and can yield as much as 80-percent drain efficiency. The transistor and associated reference designs are available from Richardson Electronics.