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    Transistor Powers 300 W At 600 MHz

    Dec. 16, 2010
    Model MRFE6VP6300H/HS is a rugged silicon LDMOS power transistor from Freescale Semiconductor capable of 300 W continuous-wave (CW) or pulsed output power from 1.8 to 600 MHz. Ideal for defense and aerospace applications, it provides typical gain of 26.5 ...
    Related To: Microwaves & RF

    Model MRFE6VP6300H/HS is a rugged silicon LDMOS power transistor from Freescale Semiconductor capable of 300 W continuous-wave (CW) or pulsed output power from 1.8 to 600 MHz. Ideal for defense and aerospace applications, it provides typical gain of 26.5 dB and can withstand load mismatches as severe as a 65.0:1 VSWR across all phase angles. Available in bolt-down and solder-down ceramic packaging, the device can be used in single-ended or push-pull amplifier configurations and can yield as much as 80-percent drain efficiency. The transistor and associated reference designs are available from Richardson Electronics.

    About the Author

    Jack Browne | Technical Contributor

    Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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