Power Amplifiers Boost DC To 6 GHz

Nov. 19, 2008
Hittite Microwave Corp. has unveiled chip and surface-mount GaAs pHEMT power amplifiers for a wide range of applications from DC to 6 GHz. The chip amplifier, model HMC637, provides 14-dB gain with +30-dBm saturated output power and +41-dBm third-order ...
Hittite Microwave Corp. has unveiled chip and surface-mount GaAs pHEMT power amplifiers for a wide range of applications from DC to 6 GHz. The chip amplifier, model HMC637, provides 14-dB gain with +30-dBm saturated output power and +41-dBm third-order intercept point from DC to 6 GHz. The chip amplifier does not require matching external components and consumes only 400 mA current from a +12-VDC supply.

The surface-mount amplifier, model HMC637LP5, provides performance similar to the chip, but is supplied in a RoHS-compliant 5 x 5 mm leadless QFN surface-mount package. Like the chip amplifier, it is suitable for applications in military electronic warfare (EW) and electronic countermeasures (ECM), test and measurement equipment, and telecommunications systems.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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