A new power amplifier (PA) promises to satisfy applications ranging from RF-identification (RFID) readers to cellular infrastructure. Specifically, the 2-W MAAP-007649-000100 covers the 800-to-1000-MHz frequency band. At 900 MHz, its typical performance is 19 dB gain, +34 dBm output power at 1-dB compression, and +49 dBm output third-order intercept point. The device features good adjacent-channel-power-ratio (ACPR) linearity performance for cellular-infrastructure standards. It requires a single +7.5-VDC supply in addition to a +4.5-V reference pin for power-down and power-control capability. In RFID reader applications, it provides greater than 1 W dense-reader-mode (DRM) spectral mask linearity and a flat gain response. The MAAP-007649-000100 is designed on a high-breakdown-voltage gallium-arsenide (GaAs) HBT process. It is available in 4-mm, 16-lead PQFN surface-mount packaging. P&A: stock; $4.94 (10,000).
M/A-COM, 1011 Pawtucket Blvd., Lowell, MA 01853; (978) 442-5000, Internet: www.macom.com
About the Author
Nancy Friedrich
RF Product Marketing Manager for Aerospace Defense, Keysight Technologies
Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.