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LNA Transistor Suits Mobile WiFi Applications

Jan. 29, 2009

Characterized for 5.8-GHz IEEE 802.11a mobile WiFi applications, the model NESG4030M14 heterojunction bipolar transistor (HBT) features a typical noise figure of 1.1 dB at 5.8 GHz with associated gain of typically 11.5 dB. Fabricated using the140-GHz fMAX UHS4 silicon-germanium:carbide (SiGe:C) process, the NESG4030M14 offers 80 V (MM) of on-board electrostatic-discharge (ESD) protection. It delivers +9 dBm output power at 1-dB compression while drawing only 6 mA current from a +2-VDC supply. It is housed in a package measuring 1.0 x 1.2 x 0.5 mm. P&A: $0.40 in 10,000 quantities.

About the Author

Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.