LNA Transistor Suits Mobile WiFi Applications

Characterized for 5.8-GHz IEEE 802.11a mobile WiFi applications, the model NESG4030M14 heterojunction bipolar transistor (HBT) features a typical noise figure of 1.1 dB at 5.8 GHz with associated gain of typically 11.5 dB. Fabricated using the140-GHz ...
Jan. 29, 2009

Characterized for 5.8-GHz IEEE 802.11a mobile WiFi applications, the model NESG4030M14 heterojunction bipolar transistor (HBT) features a typical noise figure of 1.1 dB at 5.8 GHz with associated gain of typically 11.5 dB. Fabricated using the140-GHz fMAX UHS4 silicon-germanium:carbide (SiGe:C) process, the NESG4030M14 offers 80 V (MM) of on-board electrostatic-discharge (ESD) protection. It delivers +9 dBm output power at 1-dB compression while drawing only 6 mA current from a +2-VDC supply. It is housed in a package measuring 1.0 x 1.2 x 0.5 mm. P&A: $0.40 in 10,000 quantities.

About the Author

Nancy Friedrich

Nancy Friedrich

RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.

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