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GaN Transistor Pushes 500 W

GaN Transistor Pushes 500 W

This power transistor provides 500 W output power with short radar pulses from 1200 to 1400 MHz.

Internally impedance matched for optimum operation from 1200 to 1400 MHz, model MAGX-00214-500L00 is a high-power transistor with 500 W pulsed output power for L-band radar systems. Fabricated with gallium-nitride (GaN) on silicon carbide (SiC) device technology, this gold-metallized transistor achieves its rated output power with 300-μs pulses at a 10% duty cycle. It delivers 19.2-dB gain across the operating bandwidth with only 0.4-dB pulse droop and impressive 55% power-added efficiency (PAE). Designed for +50-VDC supplies, the RoHS-compliant transistor offers stable operation under extreme mismatch conditions with a projected mean time to failure (MTTF) of 600 years. The high-power GaN transistor is designed for operating temperatures from -40 to +95°C and is available in flange-mount and flangeless packages. According to Product Manager Paul Beasley, “The device is an ideal candidate for customers looking to upgrade L-band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM’s GaN Power Solutions.”

MACOM Technology Solutions, Inc., 100 Chelmsford St., Lowell, MA 01851; (800) 366-2266, (978) 656-2500,

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