Embedded Flash-Memory Devices Target High-Capacity Mobile Apps
KIOXIA Europe has begun sampling its latest Universal Flash Storage (UFS) 4.1 embedded memory devices with 4-bit-per-cell, quad-level cell (QLC) technology. Delivering performance and efficiency gains, the devices are intended for read-intensive applications and high-capacity storage needs. They leverage 8th-generation BiCS FLASH 3D flash-memory technology.
The QLC UFS has a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advances in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance.
The devices achieve significant performance increases, including sequential write speeds of up to 25%, random read speeds of up to 90%, and random write speeds of up to 95% compared to legacy devices. The write amplification factor is also improved by a maximum of 3.5X (with WriteBooster disabled).
The KIOXIA QLC UFS supports product categories that demand higher capacity and performance, including PCs, networking, AR/VR, IoT, and AI-enabled devices. Provided in 512-GB and 1-TB versions, UFS 4.1 devices also integrate a controller in a JEDEC-standard package.
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About the Author
Alix Paultre
Editor-at-Large, Microwaves & RF
Alix is Editor-at-Large for Microwaves & RF.
An Army veteran, Alix Paultre was a signals intelligence soldier on the East/West German border in the early ‘80s, and eventually wound up helping launch and run a publication on consumer electronics for the U.S. military stationed in Europe. Alix first began in this industry in 1998 at Electronic Products magazine, and since then has worked for a variety of publications, most recently as Editor-in-Chief of Power Systems Design.
Alix currently lives in Wiesbaden, Germany.