NXP Unleashes SiGeC Transistor

Nov. 8, 2007

NXP Semiconductors, the independent company founded by Philips, has developed the model BFU725F low-noise transistor based on silicon-germanium-carbon (SiGeC) BiCMOS process technology. The low-cost and RoHS-compliant transistor boasts a cutoff frequency that supports applications in the 10 to 30 GHz range. It achieves a noise figure of 0.43 dB at 1.8 GHz and 0.70 dB at 5.8 GHz, with maximum stable gain of 27 dB at 1.8 GHz and 10 dB at 18 GHz. The device has a cutoff frequency of 70 GHz yet is supplied in a low-cost plastic surface-mount package. For more information, visit the NXP Semiconductors website at: http://www.nxp.com

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.