Atmel Launches SiGe Power Amplifiers

April 7, 2004

Atmel Corp. (San Jose, CA) announced a line of power amplifiers based on silicon germanium (SiGe) at the recent Wireless Systems Design Conference & Expo (San Diego, CA). Although long associated with small-signal devices, Atmel is among several companies working on power products based on SiGe. The new multipurpose power amplifiers (PAs), models TO905 and ATR0906 are fabricated with the company's own SiGe process and designed for operating frequencies of 135 to 600 MHz and 500 to 1000 MHz, respectively. As much as 32 dB power gain can be set dynamically, with as much as +35 dBm output power in CW mode and efficiency as high as 55 percent. For more on the SiGe power amplifiers, visit the company's web site at www.atmel.com. For a complete wrap-up of the 2004 Wireless Systems Design Conference & Expo, see the April issue of Microwaves & RF magazine.

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About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.