Cree Teams With RFHIC For GaN

June 11, 2009
Cree has signed a definitive agreement with RFHIC Corp. of Suwon, Korea to supply GaN-on-silicon-carbide transistors for RFHIC's GaN HEMT amplifier products. According to Dr. Cengiz Balkas, Vice President and General Manager of Cree's Power and RF ...

Cree has signed a definitive agreement with RFHIC Corp. of Suwon, Korea to supply GaN-on-silicon-carbide transistors for RFHIC's GaN HEMT amplifier products. According to Dr. Cengiz Balkas, Vice President and General Manager of Cree's Power and RF Business unit, "This important relationship is designed to allow both Cree and RFHIC to expand their market presence and accelerate the insertion of GaN HEMT technology into a number of key volume applications." Jim Milligan, Director of RF and Microwave Products at Cree, added that "The combination of Cree's and RFHIC's core strengths can accelerate GaN HEMT market penetration in cellular infrastructure, two-way communication, CATV amplifier, and a variety of other emerging market segments."

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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