RF SOI Platform Promises Next-Gen Monolithic Integration
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pSemi comes to IMS 2025 (Booth #443) to show off UltraCMOS+, which is its latest breakthrough in RF silicon-on-insulator (SOI) platform technology. According to the company, this RF SOI platform will produce pSemi’s next generation of monolithic integration with vast improvements in power handling, linearity, isolation, RON, COFF, integrated intelligence, and, ultimately, portfolio expansion.
As the single source of advanced silicon-on-sapphire (SOS), pSemi has developed a unique team of process engineers, IC designers, and software engineers to advance the technology. The result is the development of the UltraCMOS+ RF SOI platform, which includes proprietary semiconductor processes, product development kits (PDKs), simulation software, and unique circuit techniques.
Over the last decade, pSemi transitioned its focus from SOS to SOI but maintained its team and continued the advancement of UltraCMOS. The pSemi team and company culture enabled the rapid development of 16 generations of UltraCMOS, expanding the usage model while also optimizing performance for targeted RF functions.