Home

GaN Transistor Powers S-Band Radar (.PDF Download)

Nov. 7, 2013

Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when...

Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

Download

Continue Reading

Reducing Time-Delay Interference in Mission-Critical Situations

Microwaves & RF TechXchanges

Sponsored Recommendations

Forging the Future of Defense

Raytheon’s Advanced Technology team incubates capabilities that fuel the future of defense. Together with leading research and development organizations, def...

Phase-Matched Cable Assemblies

Phase-matched cable assemblies are ubiquitous, and growing in popularity. Electrical length matching requirements continue to tighten and the mechanical precision of cable construction...

3 New Wideband MMIC LNAs Cover 5.5 to 20 GHz

Mini-Circuits’ expanded PMA3-series of wideband, ultra-low NF MMIC amplifiers operates in ranges between 5.5 and 20 GHz.

Wideband Amplifiers Variable and Temperature-Compensated Gain

Many types of RF systems and applications that span from the upper end of microwave frequencies to the lower end of mmWave have arisen in recent years. Meeting system requirements...