GaN Transistor Powers S-Band Radar (.PDF Download)

    Nov. 7, 2013

    Model IGN2729M250C is an internally impedance-matched, gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for S-band radar applications from 2.7 to 2.9 GHz. It delivers at least 250 W output power when...

    Register or sign in below to download the full article in .PDF format, including high resolution graphics and schematics when applicable.

    Download

    Continue Reading

    Sponsored Recommendations

    Explore cascaded amplifiers, revealing how a single driver can dominate performance in a four-parallel setup and how optimized input power can reduce AM-to-PM distortion for maximum...
    See how an X-band SSB upconverter built with Mini-Circuits components uses IQ mixing to suppress unwanted sidebands and boost spectral efficiency for applications from 5G to radar...
    Mini-Circuits VP of Engineering Joe Merenda explains additive phase noise (APN) in RF amplifiers, covering theory, measurement, specifications, and small vs. large signal behavior...
    The new M4SWA4-34DR+ SP4T MMIC switch delivers fast, wideband signal routing from DC to 30 GHz, with superior power handling, quick switching, and cost advantages over SOI devices...