GaN-on-SiC HEMT Pushes Pulses To 1090 MHz (.PDF Download)

Nov. 7, 2013

Designed for high-power pulsed avionics applications, model MAGX-001090-600L00 is a gold-metalized, GaN-on-SiC high-electron-mobility transistor (HEMT) capable of 600 W output power from 1030 to 1090 MHz when driving signals with 32 μs pulse width at 2% pulse duty cycle. Suitable for secondary surveillance radar...

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