Solid-state power amplifiers (PAs) continually push the boundaries on power density in ever-smaller package sizes. Though that’s desirable from a cost, size, and weight perspective, the thermal energy for gallium-nitride (GaN)-based devices operating at high power levels is magnitudes greater than prior technologies. Such thermal-energy density in and around these devices significantly strains the transistors and surrounding components. Therefore, to get the most out of these new
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