GaAs MMIC PA Drives 0.4 To 2.7 GHz

Dec. 16, 2010
Ideal for cellular and other wireless communications designs, model HMC921LP4E is a GaAs heterojunction-bipolar-transistor (HBT) power amplifier (PA) from Hittite Microwave capable of 2 W output power from 400 to 2700 MHz. The robust output power is ...

Ideal for cellular and other wireless communications designs, model HMC921LP4E is a GaAs heterojunction-bipolar-transistor (HBT) power amplifier (PA) from Hittite Microwave capable of 2 W output power from 400 to 2700 MHz. The robust output power is accompanied by as much as 16-dB gain and third-order intercept point of +49 dBm. The compact amplifier can be biased in either a low quiescent current mode or a maximum output power mode by adjusting a single external resistor. The RoHS-compliant device is supplied in a 4 x 4 mm leadless QFN package and operates from a single +5-VDC supply.

Sponsored Recommendations

UHF to mmWave Cavity Filter Solutions

April 12, 2024
Cavity filters achieve much higher Q, steeper rejection skirts, and higher power handling than other filter technologies, such as ceramic resonator filters, and are utilized where...

Wideband MMIC Variable Gain Amplifier

April 12, 2024
The PVGA-273+ low noise, variable gain MMIC amplifier features an NF of 2.6 dB, 13.9 dB gain, +15 dBm P1dB, and +29 dBm OIP3. This VGA affords a gain control range of 30 dB with...

Fast-Switching GaAs Switches Are a High-Performance, Low-Cost Alternative to SOI

April 12, 2024
While many MMIC switch designs have gravitated toward Silicon-on-Insulator (SOI) technology due to its ability to achieve fast switching, high power handling and wide bandwidths...

Request a free Micro 3D Printed sample part

April 11, 2024
The best way to understand the part quality we can achieve is by seeing it first-hand. Request a free 3D printed high-precision sample part.