GaAs MMIC PA Drives 0.4 To 2.7 GHz

Dec. 16, 2010

Ideal for cellular and other wireless communications designs, model HMC921LP4E is a GaAs heterojunction-bipolar-transistor (HBT) power amplifier (PA) from Hittite Microwave capable of 2 W output power from 400 to 2700 MHz. The robust output power is accompanied by as much as 16-dB gain and third-order intercept point of +49 dBm. The compact amplifier can be biased in either a low quiescent current mode or a maximum output power mode by adjusting a single external resistor. The RoHS-compliant device is supplied in a 4 x 4 mm leadless QFN package and operates from a single +5-VDC supply.

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.