Richardson Distributes HVVi Semiconductor Devices

June 19, 2008

Richardson Electronics, Ltd. announced that it has signed a global distribution agreement with HVVi Semiconductors, Inc. to distribute that firm's RF power transistors. HVVi's devices employ the firm's High Voltage Vertical Field Effect Transistor technology to achieve high output power with high efficiency over wide frequency bandwidths for radar and avionics applications.

As Chris Marshall, vice president of Richardson Electronics' Wireless and Broadband Communications Group, notes: "We pride ourselves on working with the industry's leading-edge suppliers to bring pioneering technology to the market. With HVVi's innovative geometries, they fill a void in the Avionics transponder and ground-based radar markets. Gain, efficiency, and load-pull survivability are just a few of their attributes." HVVi's high-power transistors are designed for use at +48 VDC and are targeted at pulsed RF applications in the L-band such as IFF, TCAS, Mode-S, TACAN and ground-based radar.

Richardson Electronics

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.