Solid-State Amplifiers/Oscillators Replaced BWOs And Klystrons

April 11, 2011
TRANSISTORS ARE A MAINSTAY OF THIS INDUSTRY- just as they have been for decades. In our August 1967 issue, for example, the Cover Feature spotlighted a family of 4-Gc (GHz) transistors that generated power to 75 mW. Hailing from Texas ...

TRANSISTORS ARE A MAINSTAY OF THIS INDUSTRY- just as they have been for decades. In our August 1967 issue, for example, the Cover Feature spotlighted a family of 4-Gc (GHz) transistors that generated power to 75 mW. Hailing from Texas Instruments, the family comprised two transistors targeting practical oscillator applications above 4 Gc and a third device, which could be used in amplifiers to 4 Gc. This third device off ered guaranteed noise and gain performance at 2 Gc.

The L-187 and L-187A transistors were developed for use in fundamental-frequency oscillators. They provided typical output power of 40 and 75 mW, respectively, at 4 Gc (Fig. 1). Both devices could be tuned over octave ranges to an upper limit of roughly 6 Gc. The amplifier transistor, dubbed the L-186, offered a typical noise figure of 5 dB at 2 Gc. Under the same operating conditions, it offered common-emitter unneutralized gain of 8 dB.

The L-187 and L-187A oscillator transistors also were useful in amplifier circuits. They could deliver a somewhat higher saturated output than their sibling, the L-186. Although they offered similar gain to the L-186, they suffered a higher noise figure due to the higher operating current. These "silicon oscillators" promised to replace low-power backward-wave oscillators (BWOs) and reflex klystrons. In addition, the L-186 was used in single- and multi-stage amplifiers in place of tunnel diodes and low-power traveling-wave tubes (TWTs).

Looking back on these then cover-worthy products, one of their most standout features was their packaging. All three devices were NPN, double-diffused, epitaxial-planar siliconbipolar transistors. They were available in the firm's TI-LINE package for use in stripline circuitry (Fig. 2). The package had common-lead inductance of 0.16 nH with feedback capacitance of 0.02 pF. The L-187 and L-187A were designed for use in a common-base configuration while the L-186 was connected in common-emitter configuration.

Notably, the L-186 also came in TI's new microwave Pellet-Pak as well as an "experimental," miniature coaxial package. In the latter package, the transistor delivered a minimum common-emitter unneutralized gain of 5.5 dB at 4 Gc. The common-lead inductance of the coaxial package was 0.08 nH while feedback capacitance was 0.005 pF.

About the Author

Nancy Friedrich | Editor-in-Chief

Nancy Friedrich began her career in technical publishing in 1998. After a stint with sister publication Electronic Design as Chief Copy Editor, Nancy worked as Managing Editor of Embedded Systems Development. She then became a Technology Editor at Wireless Systems Design, an offshoot of Microwaves & RF. Nancy has called the microwave space “home” since 2005.

Sponsored Recommendations

Ultra-Low Phase Noise MMIC Amplifier, 6 to 18 GHz

July 12, 2024
Mini-Circuits’ LVA-6183PN+ is a wideband, ultra-low phase noise MMIC amplifier perfect for use with low noise signal sources and in sensitive transceiver chains. This model operates...

Turnkey 1 kW Energy Source & HPA

July 12, 2024
Mini-Circuits’ RFS-2G42G51K0+ is a versatile, new generation amplifier with an integrated signal source, usable in a wide range of industrial, scientific, and medical applications...

SMT Passives to 250W

July 12, 2024
Mini-Circuits’ surface-mount stripline couplers and 90° hybrids cover an operational frequency range of DC to 14.5 GHz. Coupler models feature greater than 2 decades of bandwidth...

Transformers in High-Power SiC FET Applications

June 28, 2024
Discover SiC FETs and the Role of Transformers in High-Voltage Applications