Solid-State Amplifiers/Oscillators Replaced BWOs And Klystrons
TRANSISTORS ARE A MAINSTAY OF THIS INDUSTRY- just as they have been for decades. In our August 1967 issue, for example, the Cover Feature spotlighted a family of 4-Gc (GHz) transistors that generated power to 75 mW. Hailing from Texas Instruments, the family comprised two transistors targeting practical oscillator applications above 4 Gc and a third device, which could be used in amplifiers to 4 Gc. This third device off ered guaranteed noise and gain performance at 2 Gc.
The L-187 and L-187A transistors were developed for use in fundamental-frequency oscillators. They provided typical output power of 40 and 75 mW, respectively, at 4 Gc (Fig. 1). Both devices could be tuned over octave ranges to an upper limit of roughly 6 Gc. The amplifier transistor, dubbed the L-186, offered a typical noise figure of 5 dB at 2 Gc. Under the same operating conditions, it offered common-emitter unneutralized gain of 8 dB.
The L-187 and L-187A oscillator transistors also were useful in amplifier circuits. They could deliver a somewhat higher saturated output than their sibling, the L-186. Although they offered similar gain to the L-186, they suffered a higher noise figure due to the higher operating current. These "silicon oscillators" promised to replace low-power backward-wave oscillators (BWOs) and reflex klystrons. In addition, the L-186 was used in single- and multi-stage amplifiers in place of tunnel diodes and low-power traveling-wave tubes (TWTs).
Looking back on these then cover-worthy products, one of their most standout features was their packaging. All three devices were NPN, double-diffused, epitaxial-planar siliconbipolar transistors. They were available in the firm's TI-LINE package for use in stripline circuitry (Fig. 2). The package had common-lead inductance of 0.16 nH with feedback capacitance of 0.02 pF. The L-187 and L-187A were designed for use in a common-base configuration while the L-186 was connected in common-emitter configuration.
Notably, the L-186 also came in TI's new microwave Pellet-Pak as well as an "experimental," miniature coaxial package. In the latter package, the transistor delivered a minimum common-emitter unneutralized gain of 5.5 dB at 4 Gc. The common-lead inductance of the coaxial package was 0.08 nH while feedback capacitance was 0.005 pF.
About the Author

Nancy Friedrich
RF Product Marketing Manager for Aerospace Defense, Keysight Technologies
Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.