High-power amplifiers (HPAs) for RF/microwave applications were once automatically associated with electron-tube devices such as klystrons or traveling-wave tubes (TWTs). While those devices still provide some of the highest output-power levels available at microwave frequencies, solid-state HPAs are pushing output-power performance higher, largely due to the capabilities of gallium-nitride (GaN) wide-bandgap transistors that enable HPAs with high output-power levels in smaller packages.
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