GaN Amplifier Drives 600 W from 8.5 to 10.0 GHz

Based on gallium-nitride (GaN) power transistors, model BMC858109-600 is a rugged power-amplifier module capable of 600 W (+58-dBm) pulsed output power from 8.5 to 10.0 GHz. The Class AB linear amplifier module is designed for use with signals having pulse widths from 2 to 100 μs. Pulse rise/fall times are typically better than 60 ns. The GaN amplifier module provides 58-dB nominal gain with ±1-dB gain variation from 9.5 to 10.0 GHz and ±2-dB gain variation from 8.5 to 10.0 GHz. The amplifier is designed to handle maximum duty cycle of 10% with less than 1-dB pulse droop. The amplifier has input VSWR of less than 1.50:1 while output VSWR of less than 2.0:1, with second harmonics of better than -40 dBc. The amplifier draws 9 A from a +28-VDC supply. It measures 10.0 in. × 8.5 in. × 1.0 in. and weighs 5 lb. It is a suitable building block for phased-array radar systems, and is available with an optional digital interface for control and status monitoring.

Comtech PST, 105 Baylis Rd., Melville, NY 11747; (631) 777-8900, FAX: (631) 777-8877

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.