Thinkstock
DARPA

SIA Applauds DARPA’s Semiconductor Initiative

June 13, 2017
Investments by DARPA as part of the 2018 budget are expected to fuel semiconductor industry R&D.

The Semiconductor Industry Association (SIA) has welcomed a $75-million initiative expected to fund new semiconductors as part of the 2018 U.S. defense budget and funded through DARPA. The initiative would seek to drive semiconductor research beyond traditional materials and device architectures in search of new functions and performance levels.

This program would combine with DARPA’s other microelectronics R&D initiatives for a total of more than $200 million devoted to semiconductor and related technology research in the coming fiscal year. That amount would be supplemented by semiconductor industry investments.

“Semiconductors, the brains of modern electronics, are fundamental to America’s economic, technological, and military infrastructure,” said John Neuffer, president and CEO of the SIA. “Advances in semiconductor technology reverberate throughout society, making technology more affordable and accessible to consumers, and boosting U.S. innovation, productivity, and economic growth. DARPA’s new initiative would strengthen long-range semiconductor research, enhance semiconductor technology’s positive impacts on our country, and bolster national security.”

Advanced materials are expected to be a key part of the semiconductor R&D and future developments. For example, the RF/microwave industry has seen sweeping progress in many different markets due to initial government investments in gallium nitride (GaN) semiconductor materials several years ago. The ripple effect from this new DARPA investment is expected to be felt across a wide range of semiconductor applications, including communications, computing, health care, energy, and transportation.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

Sponsored Recommendations

Wideband Peak & Average Power Sensor with 80 Msps Sample Rate

Aug. 16, 2024
Mini-Circuits’ PWR-18PWHS-RC power sensor operates from 0.05 to 18 GHz at a sample rate of 80 Msps and with an industry-leading minimum measurement range of -40 dBm in peak mode...

Turnkey Solid State Energy Source

Aug. 16, 2024
Featuring 59 dB of gain and output power from 2 to 750W, the RFS-G90G93750X+ is a robust, turnkey RF energy source for ISM applications in the 915 MHz band. This design incorporates...

90 GHz Coax. Adapters for Your High-Frequency Connections

Aug. 16, 2024
Mini-Circuits’ expanded line of coaxial adapters now includes the 10x-135x series of 1.0 mm to 1.35 mm models with all combinations of connector genders. Ultra-wideband performance...

Ultra-Low Phase Noise MMIC Amplifier, 6 to 18 GHz

July 12, 2024
Mini-Circuits’ LVA-6183PN+ is a wideband, ultra-low phase noise MMIC amplifier perfect for use with low noise signal sources and in sensitive transceiver chains. This model operates...