Designers of high-power RF/microwave amplifiers now have additional options when using +50-VDC discrete gallium-nitride (GaN) power transistors, with a trio of bare GaN high-electron-mobility-transistor (HEMT) die providing power levels as high as 320 W through 4 GHz. The three discrete transistor die include a device capable of 20 W output power through 6 GHz, and device capable of 75 W output power through 6 GHz, and a device capable of 320 W output power through 4 GHz. The GaN HEMT die exhibit 17-dB typical small-signal gain and 60% typical power-added efficiency (PAE) at 6 GHz and 18-dB typical small-signal gain and 65% typical PAE at 4 GHz. They are well suited for applications in cellular infrastructure, two-way radios, satellite-communications (satcom) systems, and test instrumentation.
Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (919) 313-5300, (800) 533-2583, FAX: (919) 313-5558
