Image

GaN Transistors Pass 300W through 4 GHz

Jan. 5, 2015
These high-power discrete GaN transistors can achieve more than 300 W output power through 4 GHz.
Designers of high-power RF/microwave amplifiers now have additional options when using +50-VDC discrete gallium-nitride (GaN) power transistors, with a trio of bare GaN high-electron-mobility-transistor (HEMT) die providing power levels as high as 320 W through 4 GHz. The three discrete transistor die include a device capable of 20 W output power through 6 GHz, and device capable of 75 W output power through 6 GHz, and a device capable of 320 W output power through 4 GHz. The GaN HEMT die exhibit 17-dB typical small-signal gain and 60% typical power-added efficiency (PAE) at 6 GHz and 18-dB typical small-signal gain and 65% typical PAE at 4 GHz. They are well suited for applications in cellular infrastructure, two-way radios, satellite-communications (satcom) systems, and test instrumentation.

Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (919) 313-5300, (800) 533-2583, FAX: (919) 313-5558

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

Sponsored Recommendations

Ultra-Low Phase Noise MMIC Amplifier, 6 to 18 GHz

July 12, 2024
Mini-Circuits’ LVA-6183PN+ is a wideband, ultra-low phase noise MMIC amplifier perfect for use with low noise signal sources and in sensitive transceiver chains. This model operates...

Turnkey 1 kW Energy Source & HPA

July 12, 2024
Mini-Circuits’ RFS-2G42G51K0+ is a versatile, new generation amplifier with an integrated signal source, usable in a wide range of industrial, scientific, and medical applications...

SMT Passives to 250W

July 12, 2024
Mini-Circuits’ surface-mount stripline couplers and 90° hybrids cover an operational frequency range of DC to 14.5 GHz. Coupler models feature greater than 2 decades of bandwidth...

Transformers in High-Power SiC FET Applications

June 28, 2024
Discover SiC FETs and the Role of Transformers in High-Voltage Applications