GaN Transistors Pass 300W through 4 GHz

Jan. 5, 2015
These high-power discrete GaN transistors can achieve more than 300 W output power through 4 GHz.
Designers of high-power RF/microwave amplifiers now have additional options when using +50-VDC discrete gallium-nitride (GaN) power transistors, with a trio of bare GaN high-electron-mobility-transistor (HEMT) die providing power levels as high as 320 W through 4 GHz. The three discrete transistor die include a device capable of 20 W output power through 6 GHz, and device capable of 75 W output power through 6 GHz, and a device capable of 320 W output power through 4 GHz. The GaN HEMT die exhibit 17-dB typical small-signal gain and 60% typical power-added efficiency (PAE) at 6 GHz and 18-dB typical small-signal gain and 65% typical PAE at 4 GHz. They are well suited for applications in cellular infrastructure, two-way radios, satellite-communications (satcom) systems, and test instrumentation.

Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (919) 313-5300, (800) 533-2583, FAX: (919) 313-5558

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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