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    High-Gain GaN-on-SiC Transistors Eye Radar Pulsed Apps

    Oct. 3, 2014
    MACOM’s gallium-nitride (GaN)-on-silicon carbide (SiC) HEMT pulsed-power transistors operate over multiple octave bandwidths.

    The MAGX-000035-015000 and MAGX-000035-01500S, gallium-nitride (GaN)-on-silicon carbide (SiC) HEMT pulsed-power transistors deliver 17 W (typ.) of peak output power with 15.5 dB of power gain and 63% efficiency. Developed by MACOM, the gold-metallized devices provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths, suiting them for civilian and military radar pulsed applications. Operating frequency ranges between dc and 3.5 GHz. Mean time to failure (MTTF) equals 600 years. They come thermally protected in either enhanced flanged (Cu/W) or flangeless (Cu) ceramic packages.

    MACOM, 100 Chelmsford St., Lowell, MA 01851; 1(800) 366-2266

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