Plastic-Pack GaN Powers 3.8 GHz

May 20, 2014

A line of GaN HEMT devices provides power levels to 30 W through 3.8 GHz in plastic packages.

Boosting signal levels at high frequencies often requires efficient transistor power, and a line of gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) devices from Cree helps cut costs with economical packaging. Supplied in plastic dual-flat no-leads (DFN) surface mount packages, these affordable transistors are meant to compete with silicon and gallium-arsenide (GaAs) devices for applications from 0.7 to 3.8 GHz. The product line includes 15- and 30-W output-power transistors for use at +28 and +50 VDC, in such systems as Long-Term-Evolution (LTE) cellular networks.

Mwrf Com Sites Mwrf com Files Uploads 2014 05 Cree

In one reference design, the devices are capable of approximately 50% drain efficiency at 10 W average output power and 16-dB linear gain from 2.5 to 2.7 GHz. Samples and reference designs are available for the 30-W model CGH27030S, the 15-W model CGHV27015S, and the 30-W model CGHV27030S GaN HEMT transistors.

Cree, Inc., 4600 Silicon Dr., Durham, NC 27703; (866) 924-3645, (919) 287-7888

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.