GaN Powers Discrete Devices

June 5, 2014

A pair of discrete GaN power transistor provides as much as 18 W output power from 2.7 to 3.7 GHz.

Announcing a new additions to its lines of discrete GaN power transistors, TriQuint Semiconductor will be at the IMS 2014 (Booth No. 1533) showing new models TGA2583-SM and TGA2585-SM. The model TGA2583-SM discrete GaN power transistor delivers 10 W pulsed or continuous-wave (CW) output power from 2.7 to 3.7 GHz in a 5 × 5 mm QFN housing. It offers better than 50% power-added efficiency (PAE) with 33-dB gain and +40.5-dBm saturated output power. Model TGA2585-SM boasts 18 W pulsed or CW output power from 2.7 to 3.7 GHz with better than 50% PAE and 32-dB small-signal gain. It provides saturated output power of +42.5 dBm when operating from a +28-VDC supply. It is also supplied in a 5 × 5 mm QFN housing.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.