Power Amplifier Boosts E-Band Systems

April 28, 2014

A GaAs pHEMT amplifier provides high gain and output power from 71 to 86 GHz.

Model MAAP-011106 is an E-band power amplifier that helps transfer signals between small cellular wireless backhaul equipment at data rates exceeding 1 Gb/s. The amplifier features 20-dB typical gain from 71 to 86 GHz. It incorporates an integrated power detector and provides variable gain control for operating flexibility. The amplifier, which exhibits a third-order intercept point of +30 dBm, delivers +25-dBm saturated output power. The amplifier is based on a proven GaAs pseudomorphic-high-electron-mobility-transistor (pHEMT) semiconductor process. The amplifier boasts input and output return loss of better than 15 dB.

MACOM Technology Solutions, Inc., 100 Chelmsford St., Lowell, MA 01851; (978) 656-2500

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.