GaN Amplifier Cuts Thermal Resistance

Jan. 31, 2014

A broadband GaN amplifier achieves excellent thermal resistance to minimize heat buildup in a plastic package.

Gallium nitride (GaN) is a dynamic semiconductor material for RF/microwave high-power devices, although thermal issues are still a concern. To help “beat the heat,” the model NPA1006 broadband GaN amplifier delivers 15 W output power from 20 MHz to 1 GHz, and does it in a compact 6 × 5 mm plastic DFN surface-mount package. Achieving 60% drain efficiency helps with the thermal management. The NPA1006 also exhibits 4.6°C/W thermal resistance to help dissipate heat. The high-electron-mobility-transistor (HEMT) amplifier operates from a +28-VDC supply and provides 14-dB gain across the frequency range.

Nitronex Corp., 523 Davis Dr., Ste. 500, Morrisville, NC 27560; (919) 807-9100, FAX: (919) 472-0692.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.