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Doherty Amps Boost Digital Systems

Aug. 20, 2013
Silicon LDMOS technology has enabled the design of a pair of UWB Doherty amplifiers for digital broadcast transmitters from 470 to 860 MHz.

Earlier this year, at IMS 2013 in Seattle, WA, NXP Semiconductors launched several ultrawideband (UWB) Doherty amplifiers based on silicon laterally diffused metal-oxide-semiconductor (LDMOS) device technology for digital transmitter applications from 470 to 860 MHz. Meant to bring high gain and efficiency to transmitters operating at those frequencies, the models BLF884P and BLF884PS Doherty amplifiers are based on +50-VDC LDMOS devices and promise efficiency levels of 45 to 50%. According to Mark Murphy, Director of Marketing for RF Power and Base Stations at NXP Semiconductors, “By leveraging NXP's expertise and IP in Doherty architectures, we've been able to design a unique ultrawideband Doherty solution which achieves high efficiency without incurring additional costs, or delaying time to market: With a single Doherty design, we're able to cover the full band from 470 to 806 MHz.”

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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