GaN-on-SiC Devices Fire Doherty Amplifiers

Aug. 20, 2013
GaN-on-SiC device technology enables effective thermal management and high power levels in high-frequency Doherty amplifiers.

RFMD has been a pioneer in using gallium nitride on silicon-carbide (GaN-on-SiC) device technology in Doherty amplifiers for a variety of wireless infrastructure applications. The firm readily shares its ideas on designing amplifiers and using software simulations, including electromagnetic (EM) simulation tools, to model the performance of linear high-power Doherty amplifiers for fourth-generation (4G) and other wireless communications applications. Learn more about implementing and testing GaN-on-SiC technology from a webcast presented by Christopher Burns, RFMD’s RF Power Platform Development Manager.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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