Pursuing GaN Growth On Silicon

March 27, 2013

The cost of GaN semiconductor materials can be dramatically reduced if GaN can be grown on silicon base substrates.

The Cambridge Centre for Gallium Nitride in Cambridge, UK is exploring a number of different uses for GaN semiconductor materials. In addition to power RF/microwave transistors and amplifiers, the group is also targeting light-emitting diodes (LEDs) for optical and lighting applications. The organization’s researchers are hoping to overcome some of the challenges in growing GaN on silicon substrates, so as to maintain the excellent optical and power RF properties of GaN while also dramatically dropping the cost of GaN semiconductor materials. To learn more about the GaN-based pursuits of the Cambridge Centre for Gallium Nitride, click here.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.