50-V GaN HEMTs Aim At Cell Networks

March 27, 2013
A line of 50-Ω impedance-matched power transistors has been developed for high-efficiency at cellular communications frequencies when operating from 50-V supplies.

Showing off its high-voltage GaN high-electron-mobility-transistor (HEMT) devices at next week’s WAMICON 2013 exhibition, Cree RF hopes to build momentum for its 50-V power transistors introduced late last year. Ideal for power amplifiers in cellular communications networks, these 100- and 200-W power transistors promise not only to achieve required output power and linearity levels at cellular frequencies, but to do so with less consumed power competing power semiconductor technologies, thanks to the high efficiency of the GaN device process. The internally impedance-matched devices are available for use at frequencies from 1800 to 2200 MHz and 2500 to 2700 MHz.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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