X-Band GaN HEMT Boasts 50 W Output Power

July 13, 2007
Many RF manufacturers are turning to galliumnitride (GaN) for its promise of higher power. GaN high-electron-mobility-transistor (HEMT) amplifiers, for example, may be capable of attaining significantly higher gain and output power than GaAs ...

Many RF manufacturers are turning to galliumnitride (GaN) for its promise of higher power. GaN high-electron-mobility-transistor (HEMT) amplifiers, for example, may be capable of attaining significantly higher gain and output power than GaAs FETs at comparable frequency. The TGI8596-50 is an internally matched, GaN HEMT power amplifier. It operates in the 8.5-to-9.6-GHz range with output power of 50 W. Typically, this X-band device features a 3-dB compression point of +47.5 dBm, linear gain of 9.0 dB, and drain current of 4.5 A. Targeted applications for this device include radar systems and medical applications, such as oncology. As a follow-on to this device, C- and Ku-band GaN HEMTs are being developed for satellitecommunications applications. Samples of the TGI8596-50 are available now.

Toshiba America Electronic Components, Inc., 19900 Macarthur Blvd., Suite 400, Irvine, CA 92612; (949) 623-2900, Internet: www.toshiba.com/taec

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About the Author

Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.

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