X-Band GaN HEMT Boasts 50 W Output Power

July 13, 2007

Many RF manufacturers are turning to galliumnitride (GaN) for its promise of higher power. GaN high-electron-mobility-transistor (HEMT) amplifiers, for example, may be capable of attaining significantly higher gain and output power than GaAs FETs at comparable frequency. The TGI8596-50 is an internally matched, GaN HEMT power amplifier. It operates in the 8.5-to-9.6-GHz range with output power of 50 W. Typically, this X-band device features a 3-dB compression point of +47.5 dBm, linear gain of 9.0 dB, and drain current of 4.5 A. Targeted applications for this device include radar systems and medical applications, such as oncology. As a follow-on to this device, C- and Ku-band GaN HEMTs are being developed for satellitecommunications applications. Samples of the TGI8596-50 are available now.

Toshiba America Electronic Components, Inc., 19900 Macarthur Blvd., Suite 400, Irvine, CA 92612; (949) 623-2900, Internet: www.toshiba.com/taec

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About the Author

Nancy Friedrich | RF Product Marketing Manager for Aerospace Defense, Keysight Technologies

Nancy Friedrich is RF Product Marketing Manager for Aerospace Defense at Keysight Technologies. Nancy Friedrich started a career in engineering media about two decades ago with a stint editing copy and writing news for Electronic Design. A few years later, she began writing full time as technology editor at Wireless Systems Design. In 2005, Nancy was named editor-in-chief of Microwaves & RF, a position she held (along with other positions as group content head) until 2018. Nancy then moved to a position at UBM, where she was editor-in-chief of Design News and content director for tradeshows including DesignCon, ESC, and the Smart Manufacturing shows.