MEMS Expands Its CMOS Presence

April 20, 2010
According to Germany-based MEMS foundry X-Fab, one of its prime assets is the in-house co-existence of MEMS and CMOS mixed-signal processes. Because MEMS devices are manufactured using techniques that are similar to those employed for ICs, ...

According to Germany-based MEMS foundry X-Fab, one of its prime assets is the in-house co-existence of MEMS and CMOS mixed-signal processes. Because MEMS devices are manufactured using techniques that are similar to those employed for ICs, X-FAB plans to exploit the synergies offered by the alliance of both technologies. It has a dedicated 400 m2 of MEMS backend cleanroom and 1200 m2 of CMOS front-end cleanroom. In total, the X-FAB MEMS foundry boasts a capacity of 2500 MEMS wafer starts per month.

The foundry's main focus is on the high-volume manufacturing of bulk and surface micromachined technologies both with and without CMOS integration. X-FAB has developed its own technology platforms for MEMS applications, such as pressure, inertial, and infrared sensors. According to the firm, they can easily be adapted to meet customer requirements.

Meanwhile, a French company called DelfMEMs has developed a wafer RF MEMS device for mobile phones. It boasts switching speed of less than 1 s. According to the company, this innovation has been achieved simultaneously with a costcutting approach. The technology also has demonstrated an attractive low actuation voltage in the region of 8 to 12 V.

About the Author

Paul Whytock | Editor-in-Chief

Paul Whytock is European Editor for Microwaves & RF and European Editor-in-Chief for Electronic Design. He reports on the latest news and technology developments in Europe for his US readers while providing his European engineering audience with global news coverage from the electronics sector. Trained originally as a design engineer with Ford Motor Co., Whytock holds an HNC in mechanical, electrical, and production engineering.

Sponsored Recommendations

Wideband Peak & Average Power Sensor with 80 Msps Sample Rate

Aug. 16, 2024
Mini-Circuits’ PWR-18PWHS-RC power sensor operates from 0.05 to 18 GHz at a sample rate of 80 Msps and with an industry-leading minimum measurement range of -40 dBm in peak mode...

Turnkey Solid State Energy Source

Aug. 16, 2024
Featuring 59 dB of gain and output power from 2 to 750W, the RFS-G90G93750X+ is a robust, turnkey RF energy source for ISM applications in the 915 MHz band. This design incorporates...

90 GHz Coax. Adapters for Your High-Frequency Connections

Aug. 16, 2024
Mini-Circuits’ expanded line of coaxial adapters now includes the 10x-135x series of 1.0 mm to 1.35 mm models with all combinations of connector genders. Ultra-wideband performance...

Ultra-Low Phase Noise MMIC Amplifier, 6 to 18 GHz

July 12, 2024
Mini-Circuits’ LVA-6183PN+ is a wideband, ultra-low phase noise MMIC amplifier perfect for use with low noise signal sources and in sensitive transceiver chains. This model operates...