Hittite Microwave Launches 15-GHz Amps

May 29, 2008

Hittite Microwave Corp. has announced two new die and two surface-mount-technology-packaged GaAs monolithic-microwave-integrated-circuit (MMIC) pseudomorphic-high-electron-mobility-transistor (PHEMT) distributed power amplifiers for electronic warfare (EW), radar, and test applications from DC to 15 GHz. Model HMC619 is a chip amplifier with as much as 12 dB gain and +28 dBm output power at 1-dB compression from DC to 10 GHz. It delivers third-order intercept of +37 dBm and draws 300 mA from a +12-VDC supply. Model HMC619LP5E is a GaAs power amplifier in a plastic 5 x 5 mm SMT package with 11 dB gain and +27 dBm output power at 1-dB compression from DC to 10 GHz. Model HMC659 is a GaAs MMIC PHEMT amplifier die with 19 dB gain and +26.5 dBm output power at 1-dB compression from DC to 15 GHz. It draws 300 mA from a +8-VDC supply. Model HMC659LC5 is a GaAs MMIC power amplifier in a ceramic 5 x 5 SMT package with 19 dB gain and +27.5 dBm output power from DC to 15 GHz. It draws 300 mA from a +8-VDC supply.

Hittite Microwave Corp.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.