Nitronex Launches 100-W GaN Transistor

May 23, 2007
Nitronex has announced a +28-VDC, 100-W gallium-nitride (GaN) power transistor for WiMAX base station applications from 2.3 to 2.7 GHz. Fabricated with the company's patented SIGANTIC(R) NRF1 process, the model NPT25100 GaN-on-silicon device is ...

Nitronex has announced a +28-VDC, 100-W gallium-nitride (GaN) power transistor for WiMAX base station applications from 2.3 to 2.7 GHz. Fabricated with the company's patented SIGANTIC(R) NRF1 process, the model NPT25100 GaN-on-silicon device is tested with single- carrier, 64QAM OFDMA-based mobile WiMAX test signals at a 10.3-dB peak-to-average ratio (PAR) at 0.01-percent probability for a complementary cumulative density function (CCDF) in a 3.5-MHz channel bandwidth. It delivers 10-W average output power with 14.5-dB typical gain and 21-percent efficiency (100 W at 3-dB compression), with better than 2.5-percent error-vector- magnitude (EVM) performance. According to Chris Rauh, Vice-President of Sales and Marketing for Nitronex, "The market for 2.5-GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need." The lead-free, RoHS-compliant packaged NPT25100 device sells for $90 each in 1000 piece quantities.

Nitronex (www.nitronex.com)

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