Nitronex Launches 100-W GaN Transistor

May 23, 2007
Nitronex has announced a +28-VDC, 100-W gallium-nitride (GaN) power transistor for WiMAX base station applications from 2.3 to 2.7 GHz. Fabricated with the company's patented SIGANTIC(R) NRF1 process, the model NPT25100 GaN-on-silicon device is ...

Nitronex has announced a +28-VDC, 100-W gallium-nitride (GaN) power transistor for WiMAX base station applications from 2.3 to 2.7 GHz. Fabricated with the company's patented SIGANTIC(R) NRF1 process, the model NPT25100 GaN-on-silicon device is tested with single- carrier, 64QAM OFDMA-based mobile WiMAX test signals at a 10.3-dB peak-to-average ratio (PAR) at 0.01-percent probability for a complementary cumulative density function (CCDF) in a 3.5-MHz channel bandwidth. It delivers 10-W average output power with 14.5-dB typical gain and 21-percent efficiency (100 W at 3-dB compression), with better than 2.5-percent error-vector- magnitude (EVM) performance. According to Chris Rauh, Vice-President of Sales and Marketing for Nitronex, "The market for 2.5-GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need." The lead-free, RoHS-compliant packaged NPT25100 device sells for $90 each in 1000 piece quantities.

Nitronex (www.nitronex.com)

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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