Toshiba Touts X-Band GaN HEMT at MTT-S

June 7, 2007
Toshiba America Electronic Components (TAEC) and its parent company, Toshiba Corp., announced at this week's MTT-S the availability of the company's first GaN high-electron- mobility-transistor (HEMT) ideally suited for X-band radar and medical ...

Toshiba America Electronic Components (TAEC) and its parent company, Toshiba Corp., announced at this week's MTT-S the availability of the company's first GaN high-electron- mobility-transistor (HEMT) ideally suited for X-band radar and medical applications. The model TGI8596-50 is an internally matched GaN HEMT that operates with 50 W output power from 8.5 to 9.5 GHz. It achieves typical 3-dB compression point of +47.5 dBm with 9-dB typical linear gain when operating from 4.5 A drain current. It is targeted at radar systems as well as medical electronics applications.

Toshiba America Electronics Components (www.toshiba.com/taec/)

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