Toshiba Touts X-Band GaN HEMT at MTT-S

Toshiba America Electronic Components (TAEC) and its parent company, Toshiba Corp., announced at this week's MTT-S the availability of the company's first GaN high-electron- mobility-transistor (HEMT) ideally suited for X-band radar and medical ...
June 7, 2007

Toshiba America Electronic Components (TAEC) and its parent company, Toshiba Corp., announced at this week's MTT-S the availability of the company's first GaN high-electron- mobility-transistor (HEMT) ideally suited for X-band radar and medical applications. The model TGI8596-50 is an internally matched GaN HEMT that operates with 50 W output power from 8.5 to 9.5 GHz. It achieves typical 3-dB compression point of +47.5 dBm with 9-dB typical linear gain when operating from 4.5 A drain current. It is targeted at radar systems as well as medical electronics applications.

Toshiba America Electronics Components (www.toshiba.com/taec/)

About the Author

Jack Browne

Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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