Compact Amp Boosts 3 GHz

Aug. 8, 2012
Model TA1003 is a small but hearty power amplifier developed by Triad RF Systems using gallium nitride (GaN) device technology.

Model TA1003 is a small but hearty power amplifier developed by Triad RF Systems using gallium nitride (GaN) device technology. The Class AB power amplifier module can provide 4 W output power at 1-dB compression from 30 to 3000 MHz, and 8 W saturated output power over the same frequency range. It features 40-dB typical gain with typical gain flatness of ± 0.3 dB and typical noise figure of 4 dB. It can switch on and off under TTL control with a typical switching time of 1 ms. The amplifier module, which measures 3.75 x 2.0 x 0.52 in. and weighs just 4 oz., is supplied with SMA female input and output connectors. It can work with input power levels as high as +28 dBm and draws 1.8 A maximum current from a +28-VDC supply. The high-gain amplifier is designed for an operating (case) temperature range of -40 to +80°C.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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