Low-Noise Amplifier Spans 50 To 65 GHz

April 6, 2009
By employing gallium-arsenide (GaAs) monolithic microwave integrated circuits (MMICs), a low-noise amplifier (LNA) promises high reliability. Within its nominal range of 50 to 65 GHz, the HLNAV-64 provides small-signal gain of at least 25 dB. ...

By employing gallium-arsenide (GaAs) monolithic microwave integrated circuits (MMICs), a low-noise amplifier (LNA) promises high reliability. Within its nominal range of 50 to 65 GHz, the HLNAV-64 provides small-signal gain of at least 25 dB. The LNA typically exhibits gain flatness of 2 dB. RF input power is limited to +10 dBm while output power is typically +13 dBm at 1-dB compression. With applications in test equipment, communications equipment, and as a general-purpose V-Band amplifier, the HLNAV-64 typically boasts a noise figure of 5 dB. Other features include single-bias/internal-bias sequencing and internal voltage regulation. Typical power requirements for the amplifier are +6.5 VDC at 275 mA. The LNA is matched to the frequency range of the company's WR-15 waveguide-tocoax adapters, which allows it to be used for broadband test setups. A higher-gain version of the low-noise amplifier also is available.

HXI Millimeter Wave Products, 22 Parkridge Rd., Haverhill, MA 01835; (978) 521-7300, FAX: (978) 521-7301, Internet: www.hxi.com.

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