Infineon Cools Down LDMOS Transistors

April 7, 2004
A line of thermally-enhanced lateral-diffused metal-oxide-semiconductor (LDMOS) RF power transistors from Infineon Technologies (Morgan Hill, CA) exhibits 15 to 30 percent lower thermal resistance from the device junction to the case compared to ...

A line of thermally-enhanced lateral-diffused metal-oxide-semiconductor (LDMOS) RF power transistors from Infineon Technologies (Morgan Hill, CA) exhibits 15 to 30 percent lower thermal resistance from the device junction to the case compared to conventional LDMOS power transistors. Added to Infineon's GOLDMOS product line, the devices are designed to handle higher power levels without degradation in expected operating lifetime. Infineon's engineers have utilized materials and developed processes by which both the transistor die and the flange, the carrier on which the transistor is manufactured, are made substantially more efficient at transferring heat. Transferring heat more efficiently allows the device to operate at cooler temperatures and as is the case in all semiconductors; cooler temperatures mean better performance and reliability. The new LDMOS devices are well suited for applications in broadcast, cellular, DCS, PCS and UMTS systems.

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About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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