Freescale Launches First GaN Device

One of the leading suppliers of high-power RF/microwave transistors and amplifiers based on silicon LDMOS technology, Freescale Semiconductor, has announced its first power amplifier based on gallium-nitride (GaN) device technology. Model AFG25HW355S is a 350-W device that delivers +56-dBm peak output power from 2.3 to 2.7 GHz with 50% efficiency. It boasts 16-dB gain across that frequency range. The device is supplied in an NI-780 package. It is well suited for applications in cellular communications amplifiers, avionics, radar, and software-defined-radio (SDR) transmitters. The company already offers a wide range of silicon LDMOS products for use at 12, 28, and 50 V, as well as lower-voltage GaAs and silicon-germanium (SiGe) devices for use at frequencies to 100 GHz and higher.

Ritu Favre, Vice President and General Manager of Freescale's RF Division, notes: "Freescale's GaN RF power solutions underscore our technology-agnostic approach to the RF power market. Working with GaN in development since the mid-2000s, we have established an ideal blend of cost-efficiency, performance, and reliability, and the time is now right to add GaN-based products to our broad array of RF power amplifier solutions." To find out more about the company's new GaN device, and its various other high-power devices and amplifiers, visit Freescale Semiconductor at IMS booth No. 901.

Hide comments


  • Allowed HTML tags: <em> <strong> <blockquote> <br> <p>

Plain text

  • No HTML tags allowed.
  • Web page addresses and e-mail addresses turn into links automatically.
  • Lines and paragraphs break automatically.