Located in California’s Silicon Valley, MicroWave Technology, Inc. (MwT) was founded in 1982 by technical principals with broad experience in Gallium Arsenide (GaAs) device design and fabrication. With a factory occupying 35,000 square foot, the Company’s principal assets include both its GaAs semiconductor fab and a hybrid chip and wire microwave integrated circuit (HMIC) manufacturing facility. The vertical manufacturing and product strength provide MwT uncommon flexibility and opportunity in the microwave component marketplace.
Today MwT is a leading U.S. based merchant manufacturer of discrete Gallium Arsenide diodes and transistors (FETs, pHEMTs, and Gunn Diodes). Early work focusing on device reliability resulted in proprietary metallization systems which make MwT’s devices impervious to hydrogen contamination, now an item of great concern to the high-reliability industry.
These devices employ proprietary epi material and quarter micron recessed gate process technology, which result in highly linear (+48dBm IP3 in a 1W P-1dB Wireless Amp) and low phase noise (-125dBc @ 100 KHz Offset in a 17.5GHz DRO) de-vices with power outputs ranging from 10 milliwatts to 5 watts. These devices, sold as chips or in packages, find wide use in the amplification of signals from 10 MHz to 40 GHz in the transmission or reception of information in wireless infrastructure systems, industrial RF applications, and in various defense and space electronics.
