We’re leading the transformation from silicon to silicon carbide and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, the advancement of industrial applications and the expansion of specialty LED applications.
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Cree has signed a long-term arrangement worth $85 million to supply its Wolfspeed SiC material wafers to a manufacturer of power semiconductor devices.
If the mark of critical technology is that companies are willing to sue to protect it, and governments are blocking other countries from buying it, then gallium nitride will only...
