We’re leading the transformation from silicon to silicon carbide and GaN as we shape the future of semiconductor markets: the transition to electric vehicles, the move to faster 5G networks, the evolution of renewable energy and energy storage, the advancement of industrial applications and the expansion of specialty LED applications.
Discrete GaN transistors, whether in die or packaged forms, offer high power density to boost pulsed signals in C-, L-, and S-band radars and communications applications.
Cree has signed a long-term arrangement worth $85 million to supply its Wolfspeed SiC material wafers to a manufacturer of power semiconductor devices.
If the mark of critical technology is that companies are willing to sue to protect it, and governments are blocking other countries from buying it, then gallium nitride will only...
Infineon is on schedule to close the deal. Now it needs approval from an American security panel that has grown increasingly skeptical of foreign chip deals.
Higher power densities and frequencies are pushing packages to their limits, while emerging wireless applications such as IoT and 5G crave lower-cost housings.
These two semiconductor building blocks have been fabricated in many forms, using many different semiconductor materials, in search of ideal, reliable performance at high frequencies...
Innovations in RF/microwave product areas continue as manufacturers prepare for higher-volume applications in mobile wireless communications products and wearable devices.
Silicon devices still provide generous power levels through about 2 GHz, while GaN discrete transistors are filling many higher-frequency requirements for high output power.
Today’s satcom market can be analyzed by examining five focal points: Ka-band products, GaN devices, solid-state power amplifiers (SSPAs), traveling-wave-tube amplifiers (TWTAs...
Cree offers an alternative to traveling-wave-tube (TWT) amplifiers with two new near-instant-on-capable gallium-nitride high-electron-mobility transistors (GaN HEMTs).
The exhibition area is open for slightly less than three days, and visitors can easily spend all of their time just scouring the sections of the show floor and the companies devoted...
Engineers designing today’s wireless handheld devices and infrastructure equipment are accustomed to accurate, reliable simulation tools. However, they recognize that power amplifiers...
To get the greatest efficiency out of high-powered broadband power amplifiers, detailed knowledge of the amplifier behavior over frequency and modulation is required before an...
A line of 50-Ω impedance-matched power transistors has been developed for high-efficiency at cellular communications frequencies when operating from 50-V supplies.
Think plumbing when you think of microwaves. At least that is the way it used to be. Lots of waveguides and metal structures with cavities. And tubes. Today much of that plumbing...
Most wireless today is microwave. But it wasn't always that way. Microwave was initially associated with radar, transmission lines and other special wireless applications like...
A new family of X-band power transistors from Cree, based on GaN high-electron-mobility-transistor (HEMT) technology, promises to provide new levels of RF/microwave power density...
Discrete power transistors support RF and microwave large-signal applications with a variety of technologies, ranging from older silicon semiconductors to mixes of materials using...
SemiGenHas announced the opening of a new RF Supply Center. As of January 3, the company has begun accepting orders for epoxies, bonding tools, gold wire, and other supplies used...
Over 600 exhibitors made the trip to the Baltimore Convention Center for this years IMS, bringing news of software, hardware, test equipment, and even company acquisitions.
High-power RF and microwave signal levels are produced by both vacuum tubes and transistors in military systems, with demands for ever-increasing efficiency and smaller size.
A wide range of silicon- and GaAs-based semiconductor processes are available from open foundries, for fabricating low-noise and power devices and circuits through millimeter-...
CREE, INC. has acquired a portfolio of patents and patent applications related to semi-insulating siliconcarbide (SiC) material and power device technology from German car corporation...
Model CMPA0060025F is a broadband gallium nitride (GaN) HEMT MMIC power amplifier from Cree with instantaneous bandwidth of 20 MHz to 6 GHz. It offers 12 dB power gain over that...
Cree has signed a definitive agreement with RFHIC Corp. of Suwon, Korea to supply GaN-on-silicon-carbide transistors for RFHIC's GaN HEMT amplifier products. According to Dr. ...
To meet the size, integration, and performance requirements of next-generation communications and defense application, companies are leveraging unique and even proprietary, process...
As commercial and military solid-state amplifier designers strive for higher power levels from their assemblies, device developers are being asked for more power per RF/microwave...
Cree, Inc. has introduced the world's first commercial gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) amplifiers. Fabricated on silicon carbide (SiC) substrates...
Amplifiers for RF and microwave use are available in a range of packaged and unpackaged varieties to suit low-noise and power requirements through millimeter-wave frequencies....
