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Power Amplifier Boosts E-Band Systems

April 28, 2014
A GaAs pHEMT amplifier provides high gain and output power from 71 to 86 GHz.

Model MAAP-011106 is an E-band power amplifier that helps transfer signals between small cellular wireless backhaul equipment at data rates exceeding 1 Gb/s. The amplifier features 20-dB typical gain from 71 to 86 GHz. It incorporates an integrated power detector and provides variable gain control for operating flexibility. The amplifier, which exhibits a third-order intercept point of +30 dBm, delivers +25-dBm saturated output power. The amplifier is based on a proven GaAs pseudomorphic-high-electron-mobility-transistor (pHEMT) semiconductor process. The amplifier boasts input and output return loss of better than 15 dB.

MACOM Technology Solutions, Inc., 100 Chelmsford St., Lowell, MA 01851; (978) 656-2500

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