Distributed PA Accepts Frequencies Far and Wide

Covering a frequency range of dc to 24 GHz, this new distributed power amplifier offers the benefit of a positive gain slope.
July 23, 2019

Microchip Technology, through its Microsemi subsidiary, now offers the MMA052PP45 gallium-arsenide (GaAs) monolithic-microwave-integrated-circuit (MMIC) pseudomorphic high-electron-mobility-transistor (pHEMT) distributed power amplifier (PA) (see figure). This self-biased device handles a frequency range of dc to 24 GHz, providing 14 dB of gain with a positive slope.

The MMA052PP45 distributed amplifier operates from dc to 24 GHz.

At 10 GHz, the MMA052PP45 achieves a noise figure of 3.5 dB. At the same frequency, its output power at 3-dB compression is +27 dBm with a typical output third-order intercept point (OIP3) of +35 dBm. The amplifier, a self-biased device with 16 selectable drain current states, comes in a 4.5- × 4.5-mm quad-flat no-leads (QFN) package. Input and output ports are both matched to 50 Ω. The MMA052PP45 is well-suited for test-and-measurement, wideband aerospace and defense, and high-linearity microwave radio applications.

Since the MMA052PP45 has a positive gain slope, it can help system designers compensate for high-frequency loss from passive components, as well as other amplifiers with a negative gain slope. The MMA052PP45 was demonstrated at IMS 2019, which gave visitors an opportunity to see it in action.

Sign Up for MWRF Newsletters
Get the latest news and updates.