GaN Transistor Boosts S-Band Radar

Sept. 14, 2013
This GaN HEMT device is suitable for use in amplifiers for pulsed S-band radar applications.

Model IGN2729M250C is an internally impedance-matched gallium-nitride (GaN) high-electron-mobility-transistor (HEMT) device suitable for amplifying signals in S-band radar systems from 2.7 to 2.9 GHz. The GaN transistor supplies at least 250 W peak output power with 10-dB typical gain when operating with pulse widths of 300 μs or less and duty cycles of 10% or less. The device is rated for 25 W average output power. Specified operation is under Class-AB bias conditions.

Integra Technologies, Inc., 321 Coral Circle, El Segundo, CA 90245; (310) 606-0855, FAX: (310) 606-0865.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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