GaN Amplifier Powers 9 to 10 GHz

Sept. 18, 2015

A compact GaN-based amplifier provides 40 W output power from 9 to 10 GHz.

Model BME99109-40 is an X-band solid-state power amplifier suitable for use with pulsed and continuous-wave (CW) signals. With 40 W (+46 dBm) output power from 9 to 10 GHz, the compact amplifier delivers 46-dB nominal gain with a 30-dB dynamic range. Based on gallium-nitride (GaN) semiconductor technology, the amplifier is designed for input signal levels to +1- dBm. It exhibits second-harmonic levels of typically -60 dBc and third-harmonic levels of typically -80 dBc. The amplifier operates on +36 to +46 VDC with maximum power consumption of 225 W. It measures 4.00 × 4.00 × 3.33 in. and weighs 2.5 lbs. with SMA female connectors and WG-90 bottom-mounted output port. The amplifier is constructed to meet MIL-STD-810F requirements and an operating temperature range of 0 to +55°C.

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About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.