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GaN Amplifier Powers 9 to 10 GHz

Sept. 18, 2015
A compact GaN-based amplifier provides 40 W output power from 9 to 10 GHz.

Model BME99109-40 is an X-band solid-state power amplifier suitable for use with pulsed and continuous-wave (CW) signals. With 40 W (+46 dBm) output power from 9 to 10 GHz, the compact amplifier delivers 46-dB nominal gain with a 30-dB dynamic range. Based on gallium-nitride (GaN) semiconductor technology, the amplifier is designed for input signal levels to +1- dBm. It exhibits second-harmonic levels of typically -60 dBc and third-harmonic levels of typically -80 dBc. The amplifier operates on +36 to +46 VDC with maximum power consumption of 225 W. It measures 4.00 × 4.00 × 3.33 in. and weighs 2.5 lbs. with SMA female connectors and WG-90 bottom-mounted output port. The amplifier is constructed to meet MIL-STD-810F requirements and an operating temperature range of 0 to +55°C. 

Comtech PST, 105 Baylis Rd., Melville, NY 11747; (631) 777-8900

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