GaN Amplifiers Challenge TWTAs

June 3, 2014
A line of high-power GaN amplifiers provides pulsed output-power levels to 1 kW at frequencies to 18 GHz.

For fans of solid-state power, API Technologies Corp. is unveiling a new line of gallium-nitride (GaN) power amplifiers at Booth No. 1515 at the 2014 IMS. With frequency coverage to 18 GHz and power levels to 1 kW, these pulsed amplifiers offer the power levels of traveling-wave-tube amplifiers (TWTAs) at a fraction of the size and weight. They are ideal for commercial and military applications, including radar, communication transmitters, and jamming systems. The amplifiers are supplied in hermetic housings and available with a variety of options, include sleep mode, blanking, forward/reverse power detection, discrete power supply designs for wide DC input voltage ranges, as well as microprocessor-based control features for bias optimization, temperature compensation, and fault monitoring.

According to Dennis Barrick, technical marketing manager for RF/Microwave & Microelectronics (RF2M-US) at API Technologies, “API’s feature-rich architecture combined with complementary design tools provide engineers a suite of customizable solutions to meet challenging requirements in performance, packaging, and lead times.” Typical specifications include 1 kW peak output power from 9.2 to 9.8 GHz with a 100-μs pulse at 10% duty cycle and for 20% efficiency.

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

Sponsored Recommendations

Wideband MMIC LNA with Bypass

June 6, 2024
Mini-Circuits’ TSY-83LN+ wideband, MMIC LNA incorporates a bypass mode feature to extend system dynamic range. This model operates from 0.4 to 8 GHz and achieves an industry leading...

Expanded Thin-Film Filter Selection

June 6, 2024
Mini-Circuits has expanded our line of thin-film filter topologies to address a wider variety of applications and requirements. Low pass and band pass architectures are available...

Mini-Circuits CEO Jin Bains Presents: The RF Engine of the 21st Century

June 6, 2024
In case you missed Jin Bains' inspiring keynote talk at the inaugural IEEE MTT-S World Microwave Congress last week, be sure to check out the session recording, now available ...

Selecting VCOs for Clock Timing Circuits A System Perspective

May 9, 2024
Clock Timing, Phase Noise and Bit Error Rate (BER) Timing is critical in digital systems, especially in electronic systems that feature high-speed data converters and high-resolution...