GaAs Switch Controls 4.5 GHz

March 14, 2013
This GaAs SPDT switch operates from 100 to 4500 MHz with high isolation and low insertion loss.

Model TQP4M0010 is a gallium arsenide (GaAs) field-effect-transistor (FET) absorptive switch for use from 100 to 4500 MHz. The single-pole, double-throw (SPDT) switch provides 50 dB or more isolation between ports through 1 GHz and typically 40 dB or better isolation through 4.5 GHz. It minimizes insertion loss to typically 0.5 dB from 0.1 to 1.0 GHz; 0.6 dB from 1.0 to 2.5 GHz; 0.7 dB from 2.5 to 3.0 GHz; and 0.8 dB from 3.0 to 4.5 GHz. The switch, which achieves a typical input 1-dB compression point of +33 dBm at 2 GHz, can handle input signals as large as 2 W (+36 dBm). Ideal for wireless infrastructure applications and in test and measurement equipment, the GaAs switch is supplied in a 4 x 4 mm leadless surface-mount package, operates on supplies from +3 to +5 VDC, and handles operating temperatures from -40 to +85°C.

Triquint Semiconductor, Inc., 2300 NE Brookwood Pkwy., Hillsboro, OR 97124; (503) 615-9000, FAX: (503) 615-8902, e-mail: [email protected],

About the Author

Jack Browne | Technical Contributor

Jack Browne, Technical Contributor, has worked in technical publishing for over 30 years. He managed the content and production of three technical journals while at the American Institute of Physics, including Medical Physics and the Journal of Vacuum Science & Technology. He has been a Publisher and Editor for Penton Media, started the firm’s Wireless Symposium & Exhibition trade show in 1993, and currently serves as Technical Contributor for that company's Microwaves & RF magazine. Browne, who holds a BS in Mathematics from City College of New York and BA degrees in English and Philosophy from Fordham University, is a member of the IEEE.

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