High-efficiency amplifier model RF5602 was developed by RF Micro Devices for medium-power applications from 2.3 to 2.7 GHz, including wireless local area networks (WLANs) and WiMAX base stations. The amplifier is manufactured with an advanced indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) semiconductor process. It features 32 to 34 dB small-signal gain over that range with 2-percent error vector magnitude (EVM) performance at +25 dBm output power and +4.2 VDC and 3-percent EVM performance at +23.5 dBm output power at +3.3 VDC. The amplifier, which is supplied in a 16-pin leadless chip carrier measuring 3 x 3 x 0.45 mm, operates on supplies from +3.3 to +5.0 VDC.
According to Rohan Houlden, General Manager of the company's Wireless Connectivity business unit, "RFMD's expanding product portfolio for WiFi and WiMAX applications provides global customers the breadth and flexibility they require to accommodate the rapidly growing demand for wireless connectivity. The RF5602 leverages RFMD's PA leadership and design expertise to deliver high output power while meeting customer requirements for linearity and low current consumption, thus easing customer implementation of traditional power supply, transmit efficiency and thermal performance concerns."