100-W GaN-On-Si Transistor Targets WiMAX

The market for 2.5-GHz WiMAX solutions is growing rapidly, thereby inspiring a legion of new products. One example is a 28-V, 100-W gallium-nitride (GaN), high-electron mobility transistor (HEMT). The NPT25100 GaN-on-silicon (Si) power transistor is designed specifically for 2.3-to-2.7-GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform, which is defined as a single-carrier, orthogonal-frequency-division-multiplexing (OFDM) signal with 64-state quadrature amplitude modulation (64-QAM), 3.5-MHz channel bandwidth, and 10.3 dB peak-to-average power ratio (PAR) with the PAR at a 0.01-percent Complementary Cumulative Distribution Function (CCDF). Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21 percent efficiency, and less than 2.5 percent error vector magnitude (EVM)—all at more than 10 W of power. The transistor is packaged in a thermally enhanced, copper moly copper package. P&A: Samples and application boards will be available starting in June. Full production qualification is expected in July. The suggested price for 1000 pieces is $90.

Nitronex, 2305 Presidential Dr., Durham, NC 27703; (919) 807-9100, Internet: www.nitronex.com

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